LPSRAM features embedded error-correction code
Alliance Memory has expanded its portfolio of low power asynchronous SRAM (LPSRAM) products with new 1-Mb and 4-Mb devices that feature embedded error-correction code (ECC). Compared to previous generation devices, the new AS6CE1016A (1-Mb) and AS6CE4016B (4-Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER) for more reliable operation in a wide range of consumer, industrial, communications, and medical applications.
The new ECC feature provides 1-bit error correction per byte, which makes them particularly suitable for low power and battery backup nonvolatile memory applications. Data retention voltage for both devices is 1.5 V with typical data retention current of 1 µA for the 1-Mb AS6CE1016A and 2µA for the 4-Mb AS6CE4016B. The devices operate from a single power supply of 2.7 V to 3.6 V, and all inputs and outputs are fully TTL compatible.
With their enhanced performance, the new LPSRAMs are designed to meet the demands of a very wide range of applications, such as routers and switches in communications systems; programmable logic controllers in industrial automation systems; printers, gaming machines, musical instruments, and calculators; vending machines and ATMs; and elevator systems, control panels, and fire control systems.
Previously, the company recenlty expanded its AS25F series of multiple input/output serial NOR flash memory products with two new 1.8 V, 128-Mb devices. Offering support for single, dual, and quad SPI modes — with a QPI function — the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN combine fast read performance up to 133 MHz with fast program and erase times of 0.3 ms and 60 ms typical, respectively.
Available in 8-pin SOP Wide Body (208 mils) and 8L WSON (6- x 5-mm) packages, the devices operate from a single 1.65 V to 1.95 V power supply, with active read current as low as 5 mA and power consumption of < 3 µA typical in Deep Power-Down mode. The OR flash memory products operate over an industrial temperature range of -40°C to +85°C and provide reliable, long-term performance with 100,000 program/erase cycles.
The AS25F1128MQ-70SIN and AS25F1128MQ-70WIN support uniform 4 KB or 32 KB or 64 KB erase, offer an 8/16/32/64-byte wrap-around burst read mode, and feature program/erase suspend and resume. Advanced security features include block protection and 4K-bit secured OTP to protect content from hostile access and inadvertent programming and erasing.
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