Neo Semiconductor adds IGZO to 3D DRAM designs
Memory device R&D company Neo Semiconductor Inc. (San Jose, Calif.) has launched an indium-gallium-zinc-oxide (IGZO) variant of its 3D-X-DRAM technology.
3D-X-DRAM was first announced in 2023.
Neo said it has developed both one transistor, one capacitor (1T1C) and three transistor, zero capacitor (3T0C) X-DRAM cells that are stackable. The company said that TCAD simulation has predicted the technology is capable of 10ns read/write speeds and retention of more than 450 seconds with chip capacities of up to 512Gbit.
Test chips for the designs are expected in 2026.
IGZO is a semiconductor material known for its extremely low leakage current, good carrier mobility, and compatibility with low-temperature processing. It has been introduced as a thin-film transistor array active matrix selector for displays due to its superior mobility to amorphous silicon.
The material also shows beneficial characteristics for dynamic random-access memory (DRAM) architectures. The IMEC research institute has previously proposed IGZO for 2-transistor-1-capacitor (2T1C) and capacitor-less 2-transistor-0-capacitor (2T0C) cells. In 2T0C designs, the parasitic capacitance of the read transistor serves as the storage element, eliminating the need for a separate storage capacitor and allowing for higher density and reduced area consumption.
Neo Semiconductor’s IGZO DRAM is made using a modified 3D-NAND flash manufacturing process.
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